savantic semiconductor product specification silicon pnp power transistors 2SA1757 d escription with to-220fa package low saturation voltage wide area of safe operation applications for switching applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a i cm collector current-peak -10 a t c =25 25 p c collector power dissipation t a =25 1 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1757 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma , i b =0 -60 v v (br)ebo emitter-base breakdown voltage i e =-50a , i c =0 -5 v v cesat-1 collector-emitter saturation voltage i c =-3a, i b =-0.15a -0.3 v v cesat-2 collector-emitter saturation voltage i c =-4a, i b =-0.2a -0.5 v v besat-1 base-emitter saturation voltage i c =-3a, i b =-0.15a -1.2 v v besat-2 base-emitter saturation voltage i c =-4a, i b =-0.2a -1.5 v i cbo collector cut-off current v cb =-100v, i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe dc current gain i c =-1a ; v ce =-2v 160 320 c ob output capacitance i e =0 ; v cb =-10v,f=1mhz 130 pf f t transition frequency i c =-0.5a ; v ce =-10v 80 mhz switching times t on turn-on time 0.3 s t s storage time 1.5 s t f fall time i c =-3a ; r l =10 @ i b1 =- i b2 =-0.15a v cc a -30v 0.3 s downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1757 package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm) downloaded from: http:///
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